SI2302DDS-T1-GE3

new-10%

Manufacturer part number:SI2302DDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V

Case Package:SOT-23

Datasheet:SI2302DDS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	710mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	710mW
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	57m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.9A Tj
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Rise Time	7ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	2.6A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.057Ohm
DS Breakdown Voltage-Min	20V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free