IRFS540A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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IRFS540A Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1997
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
39W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
52mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
78nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.66000
$0.66
500
$0.6534
$326.7
1000
$0.6468
$646.8
1500
$0.6402
$960.3
2000
$0.6336
$1267.2
2500
$0.627
$1567.5
IRFS540A Product Details
IRFS540A Description
Power MOSFET IRFS540Ais a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other power semiconductor devices such as insulated gate bipolar transistors (IGBT) or thyristors, its main advantages are fast switching speed and high efficiency at low voltage.