AUIRF7207QTR

new-10%

Manufacturer part number:AUIRF7207QTR

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 20V 5.4A 8SOIC

Case Package:SOT-23

Datasheet:AUIRF7207QTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 5.4A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	780pF @ 15V
Current - Continuous Drain (Id) @ 25°C	5.4A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 4.5V
Rise Time	24ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	43 ns
Continuous Drain Current (ID)	5.4A
Threshold Voltage	-700mV
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	43A
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant