AUIRF7416QTR

new-10%

Manufacturer part number:AUIRF7416QTR

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 30V 10A 8SOIC

Case Package:SOT-23

Datasheet:AUIRF7416QTR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	18 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id	2.04V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	92nC @ 10V
Rise Time	49ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	59 ns
Continuous Drain Current (ID)	-10A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	45A
Avalanche Energy Rating (Eas)	370 mJ
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free