FDB3672

new-10%

Manufacturer part number:FDB3672

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 44A D2PAK

Case Package:SOT-23

Datasheet:FDB3672 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Voltage	100V
Power Dissipation-Max	120W Tc
Element Configuration	Single
Current	44A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	120W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.2A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	59ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	44A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.047Ohm
Drain to Source Breakdown Voltage	100V
Radiation Hardening	No
RoHS Status	RoHS Compliant