AUIRF7736M2TR

new-10%

Manufacturer part number:AUIRF7736M2TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 179A DIRECTFET

Case Package:SOT-23

Datasheet:AUIRF7736M2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric M4
Number of Pins	9
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 63W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	63W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 65A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	4267pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Ta 108A Tc
Gate Charge (Qg) (Max) @ Vgs	108nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.003Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	432A
Avalanche Energy Rating (Eas)	286 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free