IPD50P04P4L11ATMA1

new-10%

Manufacturer part number:IPD50P04P4L11ATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:IPD50P04P4L11ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	58W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	58W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.2V @ 85μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	39 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	16V
Max Dual Supply Voltage	-40V
Pulsed Drain Current-Max (IDM)	200A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead