IRFS350A

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Manufacturer part number:IRFS350A

Manufacturer:ON Semiconductor

Description:IRFS350A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IRFS350A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3PF
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	92W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2780pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.5A Tc
Gate Charge (Qg) (Max) @ Vgs	131nC @ 10V
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$2.28000	$2.28
500	$2.2572	$1128.6
1000	$2.2344	$2234.4
1500	$2.2116	$3317.4
2000	$2.1888	$4377.6
2500	$2.166	$5415

IRFS350A Description

IRFS350A is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 400V. The operating temperature of the IRFS350A is -55??C~150??C TJ and its maximum power dissipation is 92W Tc. IRFS350A has 3 pins and it is available in Tube packaging way.