AUIRF7738L2TR

new-10%

Manufacturer part number:AUIRF7738L2TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 315A DIRECTFET

Case Package:SOT-23

Datasheet:AUIRF7738L2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L6
Number of Pins	13
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N7
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.3W Ta 94W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	94W
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6m Ω @ 109A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7471pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Ta 130A Tc
Gate Charge (Qg) (Max) @ Vgs	194nC @ 10V
Rise Time	77ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	130A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.0016Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	736A
Avalanche Energy Rating (Eas)	538 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant