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BSP135 E6906

BSP135 E6906

BSP135 E6906

Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

SOT-23

BSP135 E6906 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series SIPMOS®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id 1V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 5V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.1A
Drain-source On Resistance-Max 60Ohm
Pulsed Drain Current-Max (IDM) 0.3A
DS Breakdown Voltage-Min 600V
FET Feature Depletion Mode
RoHS Status Non-RoHS Compliant

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