IRFR9N20DPBF

new-10%

Manufacturer part number:IRFR9N20DPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 9.4A DPAK

Case Package:SOT-23

Datasheet:IRFR9N20DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	86W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
JEDEC-95 Code	TO-252AA
Drain Current-Max (Abs) (ID)	9.4A
Drain-source On Resistance-Max	0.38Ohm
Pulsed Drain Current-Max (IDM)	38A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	100 mJ
RoHS Status	ROHS3 Compliant