Name: AUIRF7739L2
Brand: Infineon Technologies
SKU: AUIRF7739L2
Availability: InStock

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AUIRF7739L2

Manufacturer part number:AUIRF7739L2

Manufacturer:Infineon Technologies

Description:AUIRF7739L2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF7739L2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	HEXFET®
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XBCC-N9
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1m Ω @ 160A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	11880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Ta 270A Tc
Gate Charge (Qg) (Max) @ Vgs	330nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	46A
Drain-source On Resistance-Max	0.001Ohm
Pulsed Drain Current-Max (IDM)	1070A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	160 mJ
RoHS Status	RoHS Compliant

AUIRF7739L2 Product Details

AUIRF7739L2 Description

AUIRF7739L2 is a type of HEXFET? power MOSFET provided by Infineon Technologies based on the latest silicon technology for applications requiring high efficiency and power density. It is able to deliver extremely low on-resistance per silicon area, fast switching speed, and improved repetitive avalanche rating. As a result, AUIRF7739L2 is able to show an extremely efficient and reliable performance in automotive and other applications.