NVTFS4824NTWG

new-10%

Manufacturer part number:NVTFS4824NTWG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 18.2A 8WDFN

Case Package:SOT-23

Datasheet:NVTFS4824NTWG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Power Dissipation-Max	3.2W Ta 21W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.7m Ω @ 23A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1740pF @ 12V
Current - Continuous Drain (Id) @ 25°C	18.2A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Rise Time	27ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	46A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0075Ohm
Pulsed Drain Current-Max (IDM)	402A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	72 mJ
Height	750μm
Length	3.15mm
Width	3.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free