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IRF7799L2TR1PBF

IRF7799L2TR1PBF

IRF7799L2TR1PBF

Infineon Technologies

IRF7799L2TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7799L2TR1PBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET™ Isometric L8
Number of Pins 8
Supplier Device Package DIRECTFET L8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 38MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 4.3W Ta 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 36.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 38mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6714pF @ 25V
Current - Continuous Drain (Id) @ 25°C 375A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 33.5ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 26.6 ns
Turn-Off Delay Time 73.9 ns
Continuous Drain Current (ID) 6.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Input Capacitance 6.714nF
Recovery Time 198 ns
Drain to Source Resistance 32mOhm
Rds On Max 38 mΩ
Nominal Vgs 4 V
Height 496μm
Length 9.144mm
Width 7.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
IRF7799L2TR1PBF Product Details

IRF7799L2TR1PBF Description


The IRF7799L2TR/TR1PbF combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a footprint that is smaller than a D2 PAK and a profile that is only 0.7 mm with the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems. Applications requiring synchronous rectification and high frequency switching are best served by the IRF7799L2TR/TR1PbF. Low temperatures are made possible by the device's reduced overall losses and high level of thermal performance.



IRF7799L2TR1PBF Features


  • RoHS Compliant, Halogen Free

  • Lead-Free (Qualified up to 260°C Reflow)

  • Ideal for High Performance Isolated Converter

  • Primary Switch Socket

  • Optimized for Synchronous Rectification

  • Low Conduction Losses

  • High Cdv/dt Immunity

  • Low Profile (<0.7mm)

  • Dual Sided Cooling Compatible

  • Compatible with existing Surface Mount Techniques

  • Industrial Qualified



IRF7799L2TR1PBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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