IRF7799L2TR1PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRF7799L2TR1PBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric L8
Number of Pins
8
Supplier Device Package
DIRECTFET L8
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
38MOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
4.3W Ta 125W Tc
Element Configuration
Single
Power Dissipation
125W
Turn On Delay Time
36.3 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
38mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6714pF @ 25V
Current - Continuous Drain (Id) @ 25°C
375A Tc
Gate Charge (Qg) (Max) @ Vgs
165nC @ 10V
Rise Time
33.5ns
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
26.6 ns
Turn-Off Delay Time
73.9 ns
Continuous Drain Current (ID)
6.6A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Input Capacitance
6.714nF
Recovery Time
198 ns
Drain to Source Resistance
32mOhm
Rds On Max
38 mΩ
Nominal Vgs
4 V
Height
496μm
Length
9.144mm
Width
7.1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRF7799L2TR1PBF Product Details
IRF7799L2TR1PBF Description
The IRF7799L2TR/TR1PbF combines the most recent HEXFET? Power MOSFET Silicon technology with cutting-edge DirectFETTM packaging to provide a package with a footprint that is smaller than a D2 PAK and a profile that is only 0.7 mm with the lowest on-state resistance possible. When application note AN-1035 detailing the manufacturing processes and methods is adhered to, the DirectFET package is compatible with current layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, which maximizes heat transmission in power systems. Applications requiring synchronous rectification and high frequency switching are best served by the IRF7799L2TR/TR1PbF. Low temperatures are made possible by the device's reduced overall losses and high level of thermal performance.