AUIRF7799L2TR

new-10%

Manufacturer part number:AUIRF7799L2TR

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 250V 35A DIRECTFET

Case Package:SOT-23

Datasheet:AUIRF7799L2TR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric L8
Number of Pins	15
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	R-XBCC-N9
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	4.3W Ta 125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	36.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	38m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6714pF @ 25V
Current - Continuous Drain (Id) @ 25°C	375A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Rise Time	33.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26.6 ns
Turn-Off Delay Time	73.9 ns
Continuous Drain Current (ID)	6.6A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	35A
Drain-source On Resistance-Max	0.038Ohm
Drain to Source Breakdown Voltage	250V
Avalanche Energy Rating (Eas)	325 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant