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IPD096N08N3GATMA1

IPD096N08N3GATMA1

IPD096N08N3GATMA1

Infineon Technologies

N-Channel Tape & Reel (TR) 9.6m Ω @ 46A, 10V ±20V 2410pF @ 40V 35nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

IPD096N08N3GATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.6m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Current - Continuous Drain (Id) @ 25°C 73A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Max Dual Supply Voltage 80V
Drain Current-Max (Abs) (ID) 73A
Drain-source On Resistance-Max 0.0096Ohm
Pulsed Drain Current-Max (IDM) 292A
Avalanche Energy Rating (Eas) 90 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.51251 $1.02502
5,000 $0.48689 $2.43445
12,500 $0.46858 $5.62296
IPD096N08N3GATMA1 Product Details

IPD096N08N3GATMA1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 90 mJ.A device's maximal input capacitance is 2410pF @ 40V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 73A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 292A, which is its maximum rated peak drain current.By using 80V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (6V 10V).

IPD096N08N3GATMA1 Features


the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 292A.


IPD096N08N3GATMA1 Applications


There are a lot of Infineon Technologies
IPD096N08N3GATMA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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