IXFQ120N25X3

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Manufacturer part number:IXFQ120N25X3

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 12m Ω @ 60A, 10V ±20V 7870pF @ 25V 122nC @ 10V 250V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:IXFQ120N25X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	520W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	7870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$10.031000	$10.031
10	$9.463208	$94.63208
100	$8.927554	$892.7554
500	$8.422221	$4211.1105
1000	$7.945492	$7945.492

IXFQ120N25X3 Overview

A device's maximal input capacitance is 7870pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).