AUIRFR024NTRL

new-10%

Manufacturer part number:AUIRFR024NTRL

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:AUIRFR024NTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	45W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	45W
Case Connection	DRAIN
Turn On Delay Time	4.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	34ns
Fall Time (Typ)	27 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	17A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	68A
Avalanche Energy Rating (Eas)	71 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant