STP310N10F7

new-10%

Manufacturer part number:STP310N10F7

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 2.7m Ω @ 60A, 10V ±20V 12800pF @ 25V 180nC @ 10V TO-220-3

Case Package:SOT-23

Datasheet:STP310N10F7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	DeepGATE™, STripFET™ VII
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2.7MOhm
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STP310
Number of Elements	1
Power Dissipation-Max	315W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	315W
Case Connection	DRAIN
Turn On Delay Time	62 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	108ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	148 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	3.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	720A
Height	15.75mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free