IRL6342TRPBF

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IRL6342TRPBF

Manufacturer part number:IRL6342TRPBF

Manufacturer:Infineon Technologies

Description:IRL6342TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRL6342TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	14.6MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.6m Ω @ 9.9A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	1025pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.9A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	9.9A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	79A
Nominal Vgs	1.1 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free