AUIRFS4115 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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AUIRFS4115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2015
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRFS4115
Power Dissipation-Max
375W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12.1m Ω @ 62A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C
99A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
99A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
AUIRFS4115 Product Details
AUIRFS4115 Description
AUIRFS4115 is a type of HEXFET? power MOSFET provided by Infineon Technologies based on the latest processing techniques. It is able to provide low on-state resistance per silicon area, advanced switching performance, and improved repetitive avalanche rating. Based on its specific characteristics, power MOSFET AUIRFS4115 is well suited for automotive applications and a wide variety of other applications.