AUIRFS8408 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
AUIRFS8408 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2011
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
IRFS8408
Number of Channels
1
Power Dissipation-Max
294W Tc
Element Configuration
Single
Power Dissipation
294W
Turn On Delay Time
29 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
10820pF @ 25V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
324nC @ 10V
Rise Time
202ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
119 ns
Turn-Off Delay Time
108 ns
Continuous Drain Current (ID)
195A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Nominal Vgs
3 V
Height
4.83mm
Length
10.67mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
AUIRFS8408 Product Details
AUIRFS8408 Description
This HEXFET? Power MOSFET, specifically created for automotive applications, makes use of cutting-edge manufacturing processes to produce incredibly low on resistance per silicon area. A 175°C junction working temperature, quick switching, and enhanced repeating avalanche ratio are other benefits of this design. These characteristics work together to make this product a very effective and dependable tool for use in a range of various industries, including automotive.