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AUIRFSL8409

AUIRFSL8409

AUIRFSL8409

Infineon Technologies

MOSFET N-CH 40V 195A TO-262

SOT-23

AUIRFSL8409 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-262-3 Short Leads, I2Pak
Number of Pins 3
Supplier Device Package TO-262
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Turn On Delay Time 32 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 450nC @ 10V
Rise Time 105ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 14.24nF
Drain to Source Resistance 1.2mOhm
Rds On Max 1.2 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $2.83653 $2.83653

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