AUIRG4BC30USTRL

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Manufacturer part number:AUIRG4BC30USTRL

Manufacturer:Infineon Technologies

Description:AUIRG4BC30USTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRG4BC30USTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	100W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	23A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.52V
Turn On Time	33 ns
Test Condition	480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	50nC
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	17ns/78ns
Switching Energy	160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	150ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant