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IRGB15B60KDPBF

IRGB15B60KDPBF

IRGB15B60KDPBF

Infineon Technologies

IRGB15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGB15B60KDPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 139W
Current Rating 31A
Number of Elements 1
Element Configuration Single
Power Dissipation 208W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 34 ns
Transistor Application MOTOR CONTROL
Rise Time 16ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 184 ns
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 31A
Reverse Recovery Time 92 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 52 ns
Test Condition 400V, 15A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 15A
Turn Off Time-Nom (toff) 231 ns
IGBT Type NPT
Gate Charge 56nC
Current - Collector Pulsed (Icm) 62A
Td (on/off) @ 25°C 34ns/184ns
Switching Energy 220μJ (on), 340μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Height 15.24mm
Length 10.54mm
Width 4.69mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.85000 $4.85
10 $4.35800 $43.58
100 $3.57040 $357.04
500 $3.03944 $1519.72
1,000 $2.56339 $2.56339
IRGB15B60KDPBF Product Details

IRGB15B60KDPBF IGBT Description


The IRGB15B60KDPBF IGBT can withstand a Collector-Emitter voltage of up to 600 V and a Gate-Emitter voltage of ±20 V. This device also has rugged transient performance and low EMI, which makes it ideal for the industry-level process. What's more, its benchmark high efficiency for motor control gives users full confidence in all kinds of tasks.



IRGB15B60KDPBF IGBT Features


Low VCE (on) Non-Punch Through IGBT Technology.

Lead-Free

Low Diode VF.

Square RBSOA.

10μs Short Circuit Capability.

Ultrasoft Diode Reverse Recovery Characteristics.

Positive VCE (on) Temperature Coefficient.



IRGB15B60KDPBF IGBT Applications



Safety System

PTC Heater

Switching devices

Oil Pump

Welding

HVAC Systems

Power Converters

Induction heating

General Motor Driver

Automotive

Power Inverters

U.P.S

Switching Device

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