IRG4BC40U datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC40U Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
ULTRA FAST SWITCHING
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
160W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
40A
Turn On Time
49 ns
Test Condition
480V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 20A
Turn Off Time-Nom (toff)
380 ns
Gate Charge
100nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
34ns/110ns
Switching Energy
320μJ (on), 350μJ (off)
RoHS Status
Non-RoHS Compliant
IRG4BC40U Product Details
IRG4BC40U Description
The bipolar transistor IRG4BC40U allows a small current to be injected into one of its terminals to control the much larger current flowing between the other two terminals so that the device can be amplified or switched. BJT uses two junctions between two semiconductor types, n-type and p-type, which are regions in the single crystal of the material.
IRG4BC40U Featues
·UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching>200 kHz in resonant mode
·Generation 4 1GBT design provides tighter
parameter distribution and higher efficiency than Generation3