AUIRLR120N

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AUIRLR120N

Manufacturer part number:AUIRLR120N

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 10A DPAK

Case Package:SOT-23

Datasheet:AUIRLR120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	48W
Case Connection	DRAIN
Turn On Delay Time	4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	185m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	35ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	1V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain-source On Resistance-Max	0.225Ohm
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	85 mJ
Nominal Vgs	1 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant