AUIRLR2905

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AUIRLR2905

Manufacturer part number:AUIRLR2905

Manufacturer:Infineon Technologies

Description:AUIRLR2905 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRLR2905 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Contact Plating	Tin
Mount	Surface Mount, Through Hole
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 5V
Rise Time	84ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	42A
Threshold Voltage	1V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	55V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free