AUIRLR2905 Description
AUIRLR2905, developed by Infineon Technologies, emerges as a member of the P-channel HEXFET? power MOSFET series specifically designed for automotive applications. Low on-resistance per silicon area can be realized based on advanced processing techniques. Its fast switching speed, ruggedized device design, and logic-level gate drive ensure high flexibility and reliability. As a result, AUIRLR2905 is extremely efficient for electronic designers to use in a wide range of applications.
AUIRLR2905 Features
Advanced planar technology
Logic level gate drive
Low On-Resistance
Dynamic dV/dT rating
175??C operating temperature
Available in the D-Pak package
AUIRLR2905 Applications
