AUIRLU3110Z

new-10%

Manufacturer part number:AUIRLU3110Z

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 63A 3-Pin(3+Tab) IPAK Tube

Case Package:SOT-23

Datasheet:AUIRLU3110Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	DRAIN
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 38A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 4.5V
Rise Time	110ns
Fall Time (Typ)	48 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	63A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	42A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	250A
Nominal Vgs	1 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant