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BAT15099E6433HTMA1

BAT15099E6433HTMA1

BAT15099E6433HTMA1

Infineon Technologies

Schottky - 2 Independent 0.35pF @ 0V 1MHz 150°C TJ 4 Terminations SILICON DUAL Tape & Reel (TR) TO-253-4, TO-253AA

SOT-23

BAT15099E6433HTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Diode Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC 4V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 110mA
Base Part Number BAT15-099
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Max Current Rating 110mA
Power Dissipation-Max 100mW
Diode Type Schottky - 2 Independent
Case Connection CATHODE
Forward Current 110mA
Forward Voltage 410mV
Max Repetitive Reverse Voltage (Vrrm) 4V
Capacitance @ Vr, F 0.35pF @ 0V 1MHz
Frequency Band X B
Diode Capacitance-Max 0.35pF
Type of Schottky Barrier LOW BARRIER
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.314116 $0.314116
10 $0.296336 $2.96336
100 $0.279563 $27.9563
500 $0.263738 $131.869
1000 $0.248809 $248.809
BAT15099E6433HTMA1 Product Details

BAT15099E6433HTMA1 Overview


RF diode is recommended that the system's forward voltage is kept above 410mV.For this part, the current rating is 110mA.

BAT15099E6433HTMA1 Features




BAT15099E6433HTMA1 Applications


There are a lot of Infineon Technologies
BAT15099E6433HTMA1 applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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