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BC 807-25 B5003

  • BC 807-25 B5003
  • BC 807-25 B5003

BC 807-25 B5003

BC 807-25 B5003

Infineon Technologies

BC 807-25 B5003 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 807-25 B5003 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC807
Power - Max 330mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
BC 807-25 B5003 Product Details

BC 807-25 B5003 Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC 807-25 B5003 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC 807-25 B5003 Applications


There are a lot of Infineon Technologies BC 807-25 B5003 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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