BC 807-40W H6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC 807-40W H6327 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
DUAL
Terminal Form
GULL WING
Reach Compliance Code
compliant
Base Part Number
BC807
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
BC 807-40W H6327 Product Details
BC 807-40W H6327 Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.There is a transition frequency of 200MHz in the part.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC 807-40W H6327 Features
the DC current gain for this device is 250 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA a transition frequency of 200MHz
BC 807-40W H6327 Applications
There are a lot of Infineon Technologies BC 807-40W H6327 applications of single BJT transistors.