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BC 807-40W H6327

BC 807-40W H6327

BC 807-40W H6327

Infineon Technologies

BC 807-40W H6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 807-40W H6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
Base Part Number BC807
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
BC 807-40W H6327 Product Details

BC 807-40W H6327 Overview


DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.There is a transition frequency of 200MHz in the part.Device displays Collector Emitter Breakdown (45V maximal voltage).

BC 807-40W H6327 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz

BC 807-40W H6327 Applications


There are a lot of Infineon Technologies BC 807-40W H6327 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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