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BC 807-40W H6433

BC 807-40W H6433

BC 807-40W H6433

Infineon Technologies

BC 807-40W H6433 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 807-40W H6433 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC807
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
BC 807-40W H6433 Product Details

BC 807-40W H6433 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC 807-40W H6433 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC 807-40W H6433 Applications


There are a lot of Infineon Technologies BC 807-40W H6433 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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