STD03N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
STD03N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-5
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2006
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
160W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
JESD-30 Code
R-PSFM-T4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
160W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 10A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 10mA, 10A
Collector Emitter Breakdown Voltage
160V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.70000
$5.7
10
$5.09300
$50.93
25
$4.58320
$114.58
100
$4.17590
$417.59
250
$3.76844
$942.11
500
$3.38142
$1690.71
1,000
$2.85180
$2.8518
2,500
$2.71600
$5.432
STD03N Product Details
STD03N Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5000 @ 10A 4V.When VCE saturation is 2V @ 10mA, 10A, transistor means Ic has reached transistors maximum value (saturated).In extreme cases, the collector current can be as low as 15A volts.
STD03N Features
the DC current gain for this device is 5000 @ 10A 4V the vce saturation(Max) is 2V @ 10mA, 10A
STD03N Applications
There are a lot of Sanken STD03N applications of single BJT transistors.