BC817K40E6359HTMA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.Single BJT transistor comes in a supplier device package of SOT-23-3.Device displays Collector Emitter Breakdown (45V maximal voltage).During maximum operation, collector current can be as low as 500mA volts.
BC817K40E6359HTMA1 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3
BC817K40E6359HTMA1 Applications
There are a lot of Infineon Technologies BC817K40E6359HTMA1 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
