MMBT100A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from MICROSS/On Semiconductor stock available on our website
SOT-23
MMBT100A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Package / Case
SOT-23
Number of Pins
3
Weight
30mg
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
45V
Max Power Dissipation
350mW
Current Rating
500mA
Frequency
250MHz
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
250MHz
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
400mV
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
300
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
25
$4.00000
$100
MMBT100A Product Details
MMBT100A Overview
This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Keeping the emitter base voltage at 6V can result in a high level of efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 250MHz.The maximum collector current is 500mA volts.
MMBT100A Features
a collector emitter saturation voltage of 400mV the emitter base voltage is kept at 6V the current rating of this device is 500mA a transition frequency of 250MHz
MMBT100A Applications
There are a lot of MICROSS/On Semiconductor MMBT100A applications of single BJT transistors.