BC846BWE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
SOT-23
BC846BWE6327HTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
250mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC846
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
250MHz
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
80V
RoHS Status
RoHS Compliant
BC846BWE6327HTSA1 Product Details
BC846BWE6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 250MHz.When collector current reaches its maximum, it can reach 100mA volts.
BC846BWE6327HTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA a transition frequency of 250MHz
BC846BWE6327HTSA1 Applications
There are a lot of Infineon Technologies BC846BWE6327HTSA1 applications of single BJT transistors.