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2SC3324GRTE85LF

2SC3324GRTE85LF

2SC3324GRTE85LF

Toshiba Semiconductor and Storage

Trans GP BJT NPN 120V 0.1A 3-Pin S-Mini T/R

SOT-23

2SC3324GRTE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 150mW
Element Configuration Single
Power - Max 150mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.075040 $0.07504
500 $0.055176 $27.588
1000 $0.045980 $45.98
2000 $0.042184 $84.368
5000 $0.039424 $197.12
10000 $0.036674 $366.74
15000 $0.035468 $532.02
50000 $0.034875 $1743.75

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