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2SC5706-TL-E

  • 2SC5706-TL-E
  • 2SC5706-TL-E

2SC5706-TL-E

2SC5706-TL-E

ON Semiconductor

2SC5706-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC5706-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 hours ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 800mW
Terminal Form GULL WING
Frequency 400MHz
Base Part Number 2SC5706
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 400MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 400MHz
Collector Emitter Saturation Voltage 160mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Height 2.3mm
Length 6.5mm
Width 5.5mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.063920 $0.06392
500 $0.047000 $23.5
1000 $0.039167 $39.167
2000 $0.035933 $71.866
5000 $0.033582 $167.91
10000 $0.031239 $312.39
15000 $0.030212 $453.18
50000 $0.029707 $1485.35
2SC5706-TL-E Product Details

2SC5706-TL-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is 160mV, which allows for maximum design flexibility.A VCE saturation (Max) of 240mV @ 100mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.400MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.A maximum collector current of 5A volts can be achieved.

2SC5706-TL-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 240mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 400MHz

2SC5706-TL-E Applications


There are a lot of ON Semiconductor 2SC5706-TL-E applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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