NJVMJD45H11T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD45H11T4G-VF01 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MJD45H11
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.75W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Transition Frequency
90MHz
Frequency - Transition
90MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.805000
$0.805
10
$0.759434
$7.59434
100
$0.716447
$71.6447
500
$0.675894
$337.947
1000
$0.637635
$637.635
NJVMJD45H11T4G-VF01 Product Details
NJVMJD45H11T4G-VF01 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 400mA, 8A.As a result, the part has a transition frequency of 90MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
NJVMJD45H11T4G-VF01 Features
the DC current gain for this device is 40 @ 4A 1V the vce saturation(Max) is 1V @ 400mA, 8A a transition frequency of 90MHz
NJVMJD45H11T4G-VF01 Applications
There are a lot of ON Semiconductor NJVMJD45H11T4G-VF01 applications of single BJT transistors.