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BCP5316H6327XTSA1

  • BCP5316H6327XTSA1
  • BCP5316H6327XTSA1

BCP5316H6327XTSA1

BCP5316H6327XTSA1

Infineon Technologies

BCP5316H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP5316H6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCP53
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Transition Frequency 125MHz
Frequency - Transition 125MHz
Power Dissipation-Max (Abs) 2W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.966527 $0.966527
10 $0.911818 $9.11818
100 $0.860206 $86.0206
500 $0.811515 $405.7575
1000 $0.765580 $765.58
BCP5316H6327XTSA1 Product Details

BCP5316H6327XTSA1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Parts of this part have transition frequencies of 125MHz.Device displays Collector Emitter Breakdown (80V maximal voltage).

BCP5316H6327XTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125MHz

BCP5316H6327XTSA1 Applications


There are a lot of Infineon Technologies BCP5316H6327XTSA1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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