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BCX56H6359XTMA1

BCX56H6359XTMA1

BCX56H6359XTMA1

Infineon Technologies

BCX56H6359XTMA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX56H6359XTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PG-SOT89
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 2W
Power - Max 2W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
BCX56H6359XTMA1 Product Details

BCX56H6359XTMA1 Overview


DC current gain in this device equals 40 @ 150mA 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Supplier package PG-SOT89 contains the product.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.During maximum operation, collector current can be as low as 1A volts.

BCX56H6359XTMA1 Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of PG-SOT89

BCX56H6359XTMA1 Applications


There are a lot of Infineon Technologies BCX56H6359XTMA1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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