MPSA70RLRMG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 5mA 10V DC current gain.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.A transition frequency of 125MHz is present in the part.In extreme cases, the collector current can be as low as 100mA volts.
MPSA70RLRMG Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is -100mA
a transition frequency of 125MHz
MPSA70RLRMG Applications
There are a lot of ON Semiconductor MPSA70RLRMG applications of single BJT transistors.
- Driver
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- Inverter
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- Muting
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- Interface
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