KSC839YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC839YBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
250mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 12V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
200MHz
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
KSC839YBU Product Details
KSC839YBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 12V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 1mA, 10mA.As a result, the part has a transition frequency of 200MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
KSC839YBU Features
the DC current gain for this device is 120 @ 2mA 12V the vce saturation(Max) is 400mV @ 1mA, 10mA a transition frequency of 200MHz
KSC839YBU Applications
There are a lot of Rochester Electronics, LLC KSC839YBU applications of single BJT transistors.