APT6013LLLG

new-10%

Manufacturer part number:APT6013LLLG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 600V 43A TO-264

Case Package:SOT-23

Datasheet:APT6013LLLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	43A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	565W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	565W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	130m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	5630pF @ 25V
Current - Continuous Drain (Id) @ 25°C	43A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	14ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	43A
Gate to Source Voltage (Vgs)	30V
Avalanche Energy Rating (Eas)	2500 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free