AUIRFSA8409-7P

new-10%

Manufacturer part number:AUIRFSA8409-7P

Manufacturer:Infineon Technologies

Description:MOSFET NCH 40V 523A D2PAK

Case Package:SOT-23

Datasheet:AUIRFSA8409-7P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
Series	Automotive, AEC-Q101, HEXFET®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	0.69m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13975pF @ 25V
Current - Continuous Drain (Id) @ 25°C	523A Tc
Gate Charge (Qg) (Max) @ Vgs	460nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	523A
Drain Current-Max (Abs) (ID)	360A
Drain-source On Resistance-Max	0.00069Ohm
Pulsed Drain Current-Max (IDM)	1440A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	1450 mJ
RoHS Status	ROHS3 Compliant