BSB280N15NZ3GXUMA1

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Manufacturer part number:BSB280N15NZ3GXUMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 150V 9A 2-Pin WDSON

Case Package:SOT-23

Datasheet:BSB280N15NZ3GXUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	3-WDSON
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	OptiMOS™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Silver/Nickel (Ag/Ni)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 57W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 60μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 75V
Current - Continuous Drain (Id) @ 25°C	9A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	6ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	150V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.028Ohm
Pulsed Drain Current-Max (IDM)	120A
Avalanche Energy Rating (Eas)	120 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free