BSC019N02KSGAUMA1

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BSC019N02KSGAUMA1

Manufacturer part number:BSC019N02KSGAUMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 20V 100A TDSON-8

Case Package:SOT-23

Datasheet:BSC019N02KSGAUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.8W Ta 104W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	104W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.95m Ω @ 50A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 350μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 10V
Current - Continuous Drain (Id) @ 25°C	30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 4.5V
Rise Time	187ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	12V
Max Dual Supply Voltage	20V
Drain Current-Max (Abs) (ID)	30A
Drain-source On Resistance-Max	0.003Ohm
Pulsed Drain Current-Max (IDM)	200A
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead