BSC028N06NSATMA1

new-10%

Manufacturer part number:BSC028N06NSATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 60V 23A TDSON-8

Case Package:SOT-23

Datasheet:BSC028N06NSATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.5W Ta 83W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.8V @ 50μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 30V
Current - Continuous Drain (Id) @ 25°C	23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Rise Time	38ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain Current-Max (Abs) (ID)	23A
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	400A
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead