BSC039N06NSATMA1

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BSC039N06NSATMA1

Manufacturer part number:BSC039N06NSATMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3.9m Ω @ 50A, 10V ±20V 2000pF @ 30V 27nC @ 10V 8-PowerTDFN

Case Package:SOT-23

Datasheet:BSC039N06NSATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	OptiMOS™
Published	2012
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Reach Compliance Code	not_compliant
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.5W Ta 69W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.8V @ 36μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	19A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	2.1V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0039Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	50 mJ
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	44 pF
Height	1.1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead